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  • Gallium nitride (GaN)
  • GaN transistors

GaN transistors (GaN HEMTs)

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Overview

CoolGaN™ Transistors - highly efficient normally-off devices ranging from 60 V up to 700 V.

Infineon's gallium nitride power transistors are driving decarbonization and digitalization, while enabling high-frequency operation, increasing efficiency and reducing system size in consumer and industrial applications. They are available in voltage classes from 60 V to 700 V and in a broad variety of packages. 

Features

  • 60 V - 700 V GaN transistors
  • Top and bottom side cooled packages
  • Ultrafast switching-speed
  • Superior FOMs
  • Continous current: 4 A - 100 A
  • RDS(on)typ. from 1.4 mΩ to 450 mΩ
  • Enhancement mode (e-mode)
  • No reverse-recovery charge
  • Ultra-low gate and output charge

Benefits

With their superior switching speed, GaN transistors enable high power density, reduce energy losses, and increase efficiency in a wide range of applications. This means that designers can create smaller, lighter, and more compact systems delivering high performance.

Compared to traditional Si switches, GaN transistors have higher thermal conductivity, allowing for better heat dissipation and improved reliability. CoolGaN™ Transistors are designed to be robust, withstanding high voltage spikes and ensuring a longer lifespan.

GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, ThinPAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

Gate driver ICs for GaN

The right gate driver IC is inevitable, as it can help designers to achieve the best performance while minimizing costs. Our broad portfolio comprises single- and dual-channel isolated and non-isolated gate drivers tailor-made for GaN. Therein, also a family of single-channel non-isolated devices with truly differential inputs, namely, the EiceDRIVER™ 1EDN TDI family.

Check out our EiceDRIVER™ portfolio, and learn about the gate driver ICs fitting your GaN designs.

Did you know?

Did you know that terms like GaN fets, GaN MOSFETs, GaN transistors and GaN HEMTs are all interchangeable terms with slight technical variations for our CoolGaN™ Transistors? 

Ask the GaN community

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Why Infineon GaN?
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Infineon is the smart choice when designing with GaN. Offering application and system expertise, the highest reliability, and a broad portfolio including matching gate driver ICs and controllers, Infineon is poised to guide the industry toward unparalleled success when it comes to designing with GaN.

An industry game-changer: 300 mm power GaN technology
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With higher system performance, increased cost-effectiveness, and 2.3x more chips per wafer compared to 200 mm, the 300 mm power GaN technology drives innovation and efficiency. On top, it contributes to achieving cost parity with silicon over time.

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Webinar: Class-D audio with GaN

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A detailed look at Class-D audio amplifier design and the many benefits with GaN power transistors

Role of wide-bandgap in next-generation solar and energy storage
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This video provides valuable insights into the advantages of WBG (SiC & GaN) technology and its potential impact on the future of renewable energy, especially solar and energy storage systems.

Leader in power systems - mastering all three technologies
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Partners

AWL-electricity's solution enabled by CoolGaN™ Transistors
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Meet our associated partner AWL-e and their innovative resonant capacitive solutions for wireless power transfer and charging. Enabled by our CoolGaN™ Transistors, their solution offers high efficiency, spatial freedom, without any wires and batteries and adaptable form factor. Watch the full video to explore the solution's demo.

QPT's motor drive enabled by CoolGaN™ Transistors
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Meet our associated partner QPT and the world's first 1MHz and GaN-based motor drive. Enabled by our CoolGaN™ Transistors, their solution offers better system efficiency, higher power density and reduced system weight. Watch the full video to explore their motor drive.
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